Building A BJT Amplifier Engineering Essay

Building A BJT Amplifier Engineering EssayStudents were undeniable to research and design a BJT Amplifier. This amplifier was to be built in the science lab and tested to verify stipulations. Calculations for electrical resistances and capacitors were done and supposed watch were obtained. The perimeter was built utilise Multisim 7 and indeed simulated to obtain practical values for resistivitys and capacitors. This is called DC analytic thinking. When the turn met the ask specifications, building of the BJT Amplifier could begin.Testing of the BJT Amplifier was done victimisation the Feedback FG601 Function Generator which provided an input and a Tektronix 2205 Oscilloscope which showed the output waveform. Also, the Fluke 177 Multi-meter was apply when checking for inactive potential differences and currents. The electric potential authorise, upper limit radial swing and the degrade cut-off frequence for the BJT Amplifier was tested. The results obtained durin g tested were compared with the simulated and theoretical results. Success of the BJT Amplifier goat only be achieved when the tested values duplicate that of the given specifications. The report that follows records calculations performed, circuits designed and the results of the tests that was done on the BJT Amplifier.List of Abbreviations emf lay downBJT Bipolar Junction Transistor accredited pee-pee input Impedance Base current Collector current Current crosswise resistor Current crossways resistorCurrent across the original emitter resistorCurrent across the new emitter resistorCurrent across the unbypassed resistor electric resistance employ in the potential dividerCollector resistorResistor apply in the potential dividerOriginal emitter resistorNew emitter resistor (bypassed)Unbypassed resistorLoad resistor Base emitter electric potentialVoltage across the aggregator and emitter Input potential difference Output electric potentialVoltage across resistorVoltage across the accumulator resistorVoltage across resistorVoltage across the original emitter resistorVoltage across the new emitter resistorVoltage across the bypassed resistorIntroductionIt is known that transistors are wide employ in electronic devices. This design project is measuring as it enables students to get practical experience in the designing of electrical devices. The practical and theoretical companionship needed for this design project challenges students as they have to validate metric values and explain why each process was done. Since the BJT Amplifier has to be designed theoretically, students ordain understand the limitations provided by the equipment. They will in like manner grasp an appreciation of the simulated circuit model as it relates to the tests performed on the circuit.The theory from Electronics provided valuable knowledge in designing the BJT amplifier. Support was given from lectures reard from Engineering Skills and Applications. The practi cal knowledge was covered in previous(prenominal) laboratory exercises which were designated to familiarizing students with the various equipments. Also, demonstrations were provided by the technicians on the use of the breadboard which is the core building block of the BJT amplifier.BACKGROUND INFORMATIONTransistors are important percentages utilize in technological devices around the world. Computers, carrell phones, and radios are some of the m some(prenominal) devices that require transistors as part of their circuit. The transistor is a collar terminal, solid state electronic device. In a three terminal device we can control electric current or potential between two of the terminals by applying an electric current or electric potential to the third terminal. This three terminal character of the transistor is what allows us to make an amplifier for electrical signals, like the one in our radio. (cited) The three terminals are the aggregator terminal, the launch terminal and the emitter terminal.There are three practicable configurations of a transistor the ballparkalty collector, viridity base and the common collector. In the common emitter amplifier configuration, the emitter terminal is common to both the input and output circuits. The current gain does not have any effect on the collector current , or the collector-emitter voltage .A quiescent point is the operating point of a device which when applied to a device, causes it to operate in a desired fashion. It also refers to the dc conditions of a circuit without an input signal. The Q-point is sometimes indicated on the output characteristics curves for a transistor amplifier. There are diverse biasing arrangements associated with transistor configurations. These include simple bias, self stabilize bias, and H-type bias.The simple bias circuit consists of a fixed bias resistor and a fixed load resistor. For this bias design, the transistor configuration being utilize is the common emitte r. The dc current gain or beta, is the ratio of the dc collector current to the dc base current. This simple bias circuit is identical to the self bias circuit with one difference the base resistor is re rancid to the transistor collector instead of the supply voltage. If the transistor utilize had a towering current gain, then the collector voltage would fall. As is affiliated to the collector then the base current would be reduced to counter the effect. If the transistor had a low value of beta, then the collector voltage would rise. This in turn provides more base current for the transistor to conduct harder and stabilize the q-point.H-TYPE BIASING is the most widely used biasing scheme in general electronics. For a single stage amplifier this circuit offers the best resilience against changes in temperature and device characteristics. The disadvantage is that a bracing of extra resistors are required, but this is outweighed by the advantage of excellent stability. The circu its below The quiescent points are usually fixed for varying collector currents in H-type biasing. If increases, then this will result in an increase in . This increase in the emitter current will flow through the emitter resistor and from the equality V=IR, the voltage across the resistor will increase. This increase in voltage across the emitter resistor will reduce the effective base-emitter voltage resulting in an increase in the stability of the collector current. Also, this type of biasing introduces a potential divider situation, where resistors R1 and R2 fix the base potential of the transistor. With H-type bias, maximum isobilateral swing can be awaitd. aimOBJECTIVESVarious specifications for the design of the BJT Amplifier were given by the rubric. The specifications given are listed in the chaseThe Voltage Gain must be 50The Lower Cut-off frequence must be below 100HzThe BJT Amplifier must be capable of driving a 100K loadA 15V supply voltage must be used as the sour ceThe output voltage must have maximum symmetrical swingA 2N3904 Transistor must be usedCHOOSING conformationThe pursuit transistor configuration comparison chart shows the different types of configurations Common EmitterCommon BaseCommon Collector(Sedra Smith, 2007)AMPLIFIER TYPE vernacular BASE COMMON EMITTER COMMON EMITTER(Emitter Resistor) COMMON COLLECTOR(Emitter Follower) arousal/OUTPUT PHASE RELATIONSHIP01801800VOLTAGE GAINHIGH mass mediumMEDIUMLOWCURRENT GAINLOWMEDIUMMEDIUMHIGHPOWER GAINLOWHIGHHIGHMEDIUMINPUT RESISTANCELOWMEDIUMMEDIUMHIGHOUTPUT RESISTANCEHIGHMEDIUMMEDIUMLOWThe common emitter transistor amplifier configuration was chosen and not the common base configuration as the common base configuration produces a voltage gain but generates no current gain between the input and the output signals. (Doug Gingrich, 1999)The hobby figure shows the general configuration of the common emitter transistor amplifier configuration physique 1 General configuration of the com mon emitter transistor amplifier configurationMethodologyDC AnalysisThe buy the farm of the DC Analysis is to allow DC biasing of the design to be verified. The DC biasing does not take away capacitors as DC is not transmitted by capacitors. The DC design is mainly used to establish the Q-points in the circuit. Q-points are the operating points in the circuit for which the transistor will perform at optimum performance. The circuit used for the DC Analysis is shown in the future(a) diagramFigure 2 spell used for DC AnalysisChoosing andBefore DC Analysis could be done, the various components which will be used in the circuit need to be deliberate. These components are , , , . From the specifications given, the voltage supply has a value of 15V and this is used to power the circuit. Before the values of these components could be calculated, the quiescent currents must be known, as rise as the current flowing through the potential divider resistor .The data sheet used is based on the 2N3904 transistor. A range for the collector current is given, within which the transistor will operate with optimum performance. Using the Base Emitter ON Voltage vs Collector Current graph found on the data sheet, a value of was read off. The graph used is shown in the following diagramFigure 3 Graph used to find a collector currentThe transistor will be built in an environment where the temperature is approximately 25. Hence the 25 line on the graph was used a reference line. From the data sheet, the Base Emitter ON Voltage was given as 0.65V. Hence, using the 25 line and reading off a voltage of 0.65V, the collector current was found to be 1.The base voltage , of the transistor depends on the current flowing through the potential divider. i.e. the current sets the base of the transistor and hence the value of . Any change in the resistance or gain of the transistor would result in an unwanted change in the base current . Also, the potential divider resistors contribute to t he input impedance of the amplifier. This input impedance needs to be much more than the output impedance of the start generator. Hence, this is another reason to keep small. was chosen asCalculatingThe emitter resistor voltage , must be chosen accordingly as this voltage will affect the stability, maximum symmetrical swing and the gain of the amplifier. This voltage should be chosen such that it is greater than the base emitter voltage of the transistor. As mentioned before, the base emitter voltage as taken from the data sheet is 0.65V.This is to ensure that the emitter resistor voltage will not be significantly affected by small changes in . This condition would increase the stability of the transistor. For maximum symmetrical voltage swing, the emitter resistor voltage should be as small as possible. The base current and the collector current will both flow out of the common emitter terminal. Hence, for to remain constant, the base current must be as small as possible to allow negligible current to flow through the base terminal. Assuming the variation possible across the emitter and collector resistors caused variations in is , is calculated using the following equation(1)The emitter resistor was calculated using the following equation(2)CalculatingFrom previous statements,For maximum symmetrical swing, half of the remaining voltage should be dropped across the collector resistor . The maximum symmetrical output voltage is calculated using the following equation(3)Therefore, the voltage across the collector emitter terminal and the collector resistor is 6.75V. From the data sheet, the maximum device dissipation for the NPN 2N3904 transistor is at 25. Since all the power dissipation occurs at the collector junction for the active region, the following equation must be satisfied(4)This is the range for which the transistor will operate with optimum performance.The power dissipated in the transistor from equation (4) is, which is sanitary within the specif ied range.A value for the component was found using the following equation(5)Calculating andThe current flows through the resistor . The value of is calculated using the following equation(6)Since the current approaches a junction, it splits into and . flows through the potential divider resistor and flows to the base terminal. As antecedently stated, the base current, must not affect the base voltage by much. Hence the base current is considered negligible and all the current from is assumed to flow through . Hence, is calculated using the following equation(7)Since some of the component values calculated was not available in stores, the closest value had to be chosen. The beat value that was chosen for each component is shown in the following tableResistor cypher prize/ measuring stick Value/6.756.81.51.5128.513021.524Table 1 Standard values chosen for resistorsCalculation of Input Impedance of transistorFrom the design specifications listed to a higher place, the lower cut off frequency must be below 100Hz. Also, as a value for was found using a graph of Current Gain vs Collector Current from the data sheet, a value for was found. The graph used is shown in the following diagramFor a collector current of 1, a gain of 130 was read off from the graph.But since this gain is above the required voltage gain of 50, certain calculations had to be done to reduce this gain and these calculations will be shown in cod course.The following equation is used to calculate the input impedance of the transistor(8)Calculation of Voltage Gain in the tour of dutyThe following equation was used to calculate the voltage gain of the circuit(9)Calculation ofThe required voltage gain of the transistor is 50. Hence, in order to reduce this gain, resistors are usually bypassed with the aid of capacitors. In this particular case, the only resistor that needs to be bypassed is the emitter resistor. Using the AC equivalent circuit, the following equation will be used to calculate t he value of the unbypassed resistor(10)where is the unbypassed emitter resistorisFrom the specification sheet given, isCalculation of new emitter resistorButHence, if is split into two resistors and , then is found from the following(11)As there are no standard 1.4k resistor is the stores, was used as 1.5k.The following table illustrates the standard emitter resistorsResistorCalculated Value/Standard Value/10010014001500Table 2 Standard values chosen for emitter resistorsCIRCUIT CALCULATIONSFigure 4 Diagram showing circuit analyzedThe following circuit calculations pertain the standard component values and is based on the circuit in the above diagram.. These circuit calculations show the theoretical value of the quiescent currents and voltages. abstractive values occur due to the circuit being under ideal conditions. The voltage gain of this circuit will be calculated as advantageously as the maximum symmetrical output voltage across the transistor. The calculations are as follow swhich flows through the collector resistorUsing the potential divider happenThe voltage drop across is the same as, as both resistors are in parallel.was found on the data sheet as specified previously as .Under ideal conditions, it is assumed that is negligible when compared with as stated previously.for small changes inwhere is 130since negligible current flows into the base terminalAC ANALYSISThe AC Analysis is used to calculate the components which would not have worked under DC biasing. These components are , and . If placed in the DC circuit, the capacitors would act as an open circuit, not allowing any current to flow. Also, the input and output impedance of the circuit was calculated.Circuits UsedThe following circuit was used in the AC AnalysisFigure 5 Circuit used for AC AnalysisThe following figure illustrates the AC equivalent of the above circuitZoutZinFigure 6 Ac equivalent of circuit shown in figure 5Calculation of CapacitorsThe capacitor values can now be calculate d using the following equation(12)where is the reactance of the circuitf is the frequencyC is the capacitanceThe capacitors behavior is defined in terms of reactance. The reactance of a capacitor is the ratio of the voltage to the current. The equation relating the reactance to the capacitance is given in equation (12).is the total input impedance of the capacitor(13)where is the input impedance, as the input is taken from the ground to the output terminals of the become generator.(14)Using equation 12But from the specification sheet, f must be less than 100Hz.f 100(15)Calculation ofFor the input spousal relationship capacitor Calculation ofFor the output coupling capacitor Where is andCalculation ofFor the bypass capacitor where (16)ButAs stores does not have these calculated capacitor values, the following standard capacitors were usedCapacitorCalculated Value/Standard Value/0.175100.2341014.985100Table 3 Standard values chosen for capacitorsCIRCUIT CALCULATIONSThe following cir cuit calculations involve the standard component values and are based on the circuit shown in figure 3. These circuit calculations show the theoretical value of the quiescent currents and voltages. Theoretical values occur due to the circuit being under ideal conditions. The voltage gain of this circuit will be calculated as well as the maximum symmetrical output voltage across the transistor. The calculations are as followswhich flows through the collector resistorUsing the potential divider rule(17)The voltage drop across is the same as, as both resistors are in parallel.was found on the data sheet as specified previously as .(18)(19)Under ideal conditions, it is assumed that is negligible when compared with as stated previously.(20)for small changes in(21)where is 130(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32)since negligible current flows into the base terminalFigure 6 was used as a reference point to calculate the voltage gain and input impedance of the circuit.Equation (10) w as used to calculate the voltage gain of the circuitThe maximum output voltage swing without clipping is calculated as using the following equation(33)The following equation is used to calculate the input impedance of the circuit(34)For simplification in calculation,(35)(36)COMPUTER SIMULATIONDC AnalysisThis design was tested theoretically in the previous section and must now be tested on a computer simulation program. The simulation program used to simulate this circuit is Multisim 7. This software program creates the circuit design and simulates the circuit practically and not theoretically. All quiescent voltages and currents were shaped as well as the cut-off frequency, voltage gain and maximum symmetrical output voltage. The graph analyzer tool on the Multisim program was used to display these graphs. The following figure illustrates the simulation done for the DC AnalysisVoltage GainThe following circuit was used to observe the voltage gain of the BJT AmplifierFigure 7 Showi ng circuit used for DC AnalysisThe voltage gain of the simulated circuit is the ratio of the maximum output voltage to the maximum input voltage. The voltage gain of the circuit is given by the equationThe following figure shows the settings used on the oscilloscope to obtain an input and output waveformThe maximum output and input signals was read off from the graph above using the Interpolator Line. Using the above equation, the voltage gain of the circuit was determined as followsThe following figure illustrates the bode plot obtained from the simulationThis graph was used to find the gain of the circuit using the following equationFrom the above equation, the gain, in decibels is related to the above equation.Using the Interpolator Line, the gain, was determined to be 34.34. Hence the voltage gain was calculated as followsThe above calculation indicates that the design circuit would produce a satisfactory gain of approximately 50.Therefore the graph in figure 10 confirms that th e design would produce a voltage gain of approximately 50.Cut-off FrequencyThe following bode plot was used to determine the lower cut-off frequencyThe figure above was used to determine the lower-cut off frequency of the circuit. The lower-cut off frequency is the frequency at which the gain of the circuit decreases by 3 decibels. The Interpolator Line was placed at a gain of 30.861decibels, as this is the gain which corresponds to the lower-cut off frequency. The lower-cut off frequency was determined to be approximately . This lower cut-off frequency is much less than 100Hz and thus it meets the required specification.The following bode plot was used to determine the upper cut-off frequencyThe figure above was used to determine the upper -cut off frequency of the circuit. The Interpolator Line was placed at a gain of 30.816 decibels, as this is the gain which corresponds to the upper-cut off frequency. The upper-cut off frequency was determined to be approximately .Lab ResultsThe final test done on the designed circuit was done in the year 1 laboratory. The actual resistances and capacitances of the standard components used were measured using the LCR meter. The following table illustrates the measured resistancesResistorStandard Resistance/Measured Resistance/ perimeter/%Lower Tolerance/Upper Tolerance/6.86.763856.467.141.51.50351.4251.57510099.81595cv130129.955123.5136.52423.529522.825.2100 k99.233595105TABLE 6 Measured resistances AND THEIR TOLERANCE RANGEThe following table illustrates the measured capacitancesCapacitorStandard Value/Measured Value/TABLE 8 Showing Measured capacitances used in the laboratoryThe BJT Amplifier was then built on the solder less breadboard. The DC LQD-421 double power supply and the function generator were used to supply the input voltages. The following diagram shows the circuit builtAs seen above, the capacitors were attached across their respective resistors and the Feedback FG 601 function generator was connected to t he input capacitor. Before measuring the quiescent points of the circuit, tests had to be done to ensure that the required gain of 50 was achieved.This was done by connecting a Tektronix 2205 dual decipher oscilloscope to the AC bias circuit. The channel 1 lead was connected to the input signal via the input capacitor and the channel 2 lead was connected across the output signal via the load.The settings on the Feedback FG 601 function generator were set to produce a 1kHz sine wave with an amplitude of . The channels on the Tektronix 2205 dual trace oscilloscope were grounded and the signals centered. The DC LQD-421 dual power supply was turned on and set to 15V and the Feedback FG 601 function generator and the Tektronix 2205 dual trace oscilloscope also turned on. The channels were switched to AC and the input and output sine waves appeared on the screen. To obtain a clear waveform on the screen, the following settings were used on the Tektronix 2205 dual trace oscilloscopeThe Vo lts/Div setting was set atThe channel 1 setting was set atThe channel 2 setting was set atThe two waveforms were then used to determine the voltage gain of the BJT Amplifier. Using the following equationThe upper and lower cut-off frequencies were found for the BJT Amplifier. This was done by varying the frequency on the Feedback FG 601 function generator and plotting a graph of Gain vs Frequency. The range used for the Feedback FG 601 function generator was10Hz 100Hz for lower cut-off frequencyThe following table illustrates the frequency and gain for lower cut-off frequencyFrequency/HzInput/mVOutput/VGain100.01550200.01550300.01550400.01550500.01550600.01550700.014.848800.014.646900.014.2421000.012.626Table4 showing frequencies used to get varying gainThe lower cut-off gain was calculated from the equationThe original setting on the Feedback FG 601 function generator was set so that the maximum symmetrical swing of the BJT Amplifier could be determined using the Tektronix 2205 du al trace oscilloscope. This was done by increasing the frequency of the Feedback FG 601 function generator until clipping of the output waveform was seen. It was noted that the BJT Amplifier did not have maximum symmetrical swing as the negative peak of the waveform started clipping after the irrefutable peak waveform. Hence, the positive swing and negative swing was calculated as shown in the followingPositive swingNegative swingThe maximum voltage swing was found to beThe original setting on the Feedback FG 601 function generator was set as the effect of removing the bypass capacitor was explored.The equipment was first turned off for safety purposes and the bypass capacitor removed. The equipments was then turned on and the settings on the Tektronix 2205 dual trace oscilloscope configured to obtain a measurable waveform. The gain was then calculated using equation ().Hence, it can be stated that the gain of the BJT Amplifier decreased considerably when the bypass capacitor was r emoved.The maximum symmetrical swing for the amplifier was then tested. This was done as followsThe frequency of the Feedback FG 601 function generator was increased until clipping occurred. It was seen that maximum symmetrical swing was not observed as the negative peak of the waveform started clipping before the positive waveform. Hence the swing was calculated for both the positive waveform and the negative waveform. The calculations are as followsPositive swingNegative swingThe maximum voltage swing was found to beThe Tektronix 2205 dual trace oscilloscope was disconnected from the circuit and the Fluke 177 Multi-meter was used to measure the quiescent points of the circuit. The probes were placed across the different points and their readings were recorded. The Fluke 177 Multi-meter was set at when measuring currents and at DC voltage when measuring voltages. The DC voltage setting was used as the AC would not yield measurable readings.To measure the quiescent currents, wires w ere stripped and attached to the leads of the probes. The circuit had to be broken at the quiescent current point being measured. accordingly the wire attached to the probe was inserted into the solder less breadboard so that the wire was in series with the component removed. The removed component was placed where it was primarily to ensure continuity in the circuit. This was repeated at all quiescent points. The following table illustrates the measured currentsThe following table illustrates the measured currentsCurrentValue/TABLE 5 AC ANALYSIS OF CIRCUITThe following table illustrates the measured voltagesVoltageValue/0.676TABLE 4 AC ANALYSISquiescent ValuesCurrents I / mAVoltagesV / VCalculatedSimulatedMeasuredCurrentI / mAVoltageV/VCurrentI / mAVoltageV/VCurrentI / mAVoltageV/V0.650.6630.676DISCUSSIONThe BJT Amplifier was built using the common emitter configuration. It was H-type biased to increase the stability in the transistor. Also, as is affected with temperature a chang e, the H-type biasing configuration ensures that changes in is minimal. Also, the resistors used were made from carbon. This means that the resistors are not required to have high temperature stability. Without a biasing arrangement, the BJT amplifier will not turn on because it will not be in the operating region according to the specifications (Boylestad, Nashelsky, 1987).The differences in values for quiescent points obtained can be explained because the calculated and simulated values were found under ideal conditions. The component values used varied from the standard values